ROHM RQ6C050UNTR

ROHM · FETs & Power MOSFETs · MPN RQ6C050UNTR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)12nC@4.5V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
RDS(on)30mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

20V 5A 1V 1.25W 30mΩ@4.5V 1 N-channel SOT-457-6 Single FETs, MOSFETs RoHS

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