ROHM RQ6C050BCTCR

ROHM · FETs & Power MOSFETs · MPN RQ6C050BCTCR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10.4nC@4.5V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)36mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF

Technical details

P-Channel 20V 5A 1.25W Surface Mount SC-95

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