ROHM RQ3P300BHTB1

ROHM · FETs & Power MOSFETs · MPN RQ3P300BHTB1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)39A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
RDS(on)15.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.04nF
TypeN-Channel

Technical details

N-Channel 100V 39A 2W HSMT-8(3.2x3)

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