ROHM · FETs & Power MOSFETs · MPN RQ3N060ATTB1
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| Output Capacitance(Coss) | 120pF |
|---|---|
| Pd - Power Dissipation | 20W |
| Gate Charge(Qg) | 50nC |
| Configuration | - |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 40mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.24nF |
20W 80V 2V 40mΩ@10V 1 N-channel N-Channel HSMT-8 Single FETs, MOSFETs RoHS