ROHM RQ3G110ATTB

ROHM · FETs & Power MOSFETs · MPN RQ3G110ATTB

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)395pF
Current - Continuous Drain(Id)35A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)9.8mΩ@10V;12.3mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.75nF

Technical details

P-Channel 40V 35A 20W Surface Mount HSMT-8(3.2x3)

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