ROHM RQ3G100GNTB

ROHM · FETs & Power MOSFETs · MPN RQ3G100GNTB

No reviews yet — be the first to review ROHM RQ3G100GNTB.

Specifications

Gate Charge(Qg)8.4nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)14.3mΩ
Number1 N-channel
Input Capacitance(Ciss)615pF

Technical details

N-Channel 40V 27A 15W HSMT-8(3x3.2)

Related FETs & Power MOSFETs