ROHM RQ3E180GNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E180GNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22.4nC@10V
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)4.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.52nF

Technical details

30V 18A 2.5V 2W 4.3mΩ@10V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS

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