ROHM RQ3E180BNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E180BNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF

Technical details

N-Channel 30V 39A 20W HSMT-8(3x3.2)

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