ROHM RQ3E180AJTB1

ROHM · FETs & Power MOSFETs · MPN RQ3E180AJTB1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)39nC@4.5V
Current - Continuous Drain(Id)18A;30A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W;30W
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.29nF

Technical details

30V 1.5V 4.5mΩ@4.5V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS

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