ROHM RQ3E180AJTB

ROHM · FETs & Power MOSFETs · MPN RQ3E180AJTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)39nC@4.5V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.29nF

Technical details

N-Channel 30V 30A 2W HSMT-8(3x3.2)

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