ROHM · FETs & Power MOSFETs · MPN RQ3E160ADTB1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 51nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
30V 16A 2.5V 2W 4.5mΩ@10V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS