ROHM RQ3E160ADTB

ROHM · FETs & Power MOSFETs · MPN RQ3E160ADTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)51nC@10V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF

Technical details

N-Channel 30V 16A 2W HSMT-8(3.2x3)

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