ROHM RQ3E150GNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E150GNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)15.3nC@10V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation17W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)6.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel 30V 39A 17W HSMT-8(3.2x3)

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