ROHM · FETs & Power MOSFETs · MPN RQ3E150BNTB
No reviews yet — be the first to review ROHM RQ3E150BNTB.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
30V 15A 2.5V 2W 5.3mΩ@10V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS