ROHM RQ3E130MNTB1

ROHM · FETs & Power MOSFETs · MPN RQ3E130MNTB1

No reviews yet — be the first to review ROHM RQ3E130MNTB1.

Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)11.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)840pF

Technical details

N-Channel 30V 13A 2W HSMT-8(3x3.2)

Related FETs & Power MOSFETs