ROHM RQ3E120GNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E120GNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)12A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W;16W
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

N-Channel 30V 12A 2W 16W HSMT-8(3x3.2)

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