ROHM RQ3E120ATTB

ROHM · FETs & Power MOSFETs · MPN RQ3E120ATTB

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Specifications

Gate Charge(Qg)62nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)410pF
RDS(on)8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.2nF

Technical details

P-Channel 30V 39A 20W HSMT-8(3x3.2)

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