ROHM · FETs & Power MOSFETs · MPN RQ3E110AJTB
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| Gate Charge(Qg) | 13.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11A;24A |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 11.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
30V 1.5V 2W 11.7mΩ@4.5V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS