ROHM · FETs & Power MOSFETs · MPN RQ3E100MNTB1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 9.9nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 12.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 520pF |
30V 10A 2.5V 2W 12.3mΩ@10V 1 N-channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS