ROHM RQ3E100BNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E100BNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)10.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

30V 21A 15W HSMT-8(3x3.2)

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