ROHM · FETs & Power MOSFETs · MPN RQ3E100ATTB
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| Output Capacitance(Coss) | 340pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 10A;31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF |
| RDS(on) | 11.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
2W 30V 2.5V 11.4mΩ@10V 1 P-Channel P-Channel HSMT-8(3x3.2) Single FETs, MOSFETs RoHS