ROHM RQ3E080BNTB

ROHM · FETs & Power MOSFETs · MPN RQ3E080BNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14.5nC@10V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation14W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)660pF

Technical details

N-Channel 30V 15A 14W Surface Mount HSMT-8

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