ROHM RQ3C150BCTB

ROHM · FETs & Power MOSFETs · MPN RQ3C150BCTB

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Specifications

Gate Charge(Qg)60nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)890pF
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)790pF
RDS(on)8.5mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)4.8nF

Technical details

P-Channel 20V 37A 20W HSMT-8(3x3.2)

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