ROHM · FETs & Power MOSFETs · MPN RQ1E100XNTR
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| Gate Charge(Qg) | 12.7nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 550mW |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
30V 10A 2.5V 550mW 10.5mΩ@10V 1 N-channel TSMT8 Single FETs, MOSFETs RoHS