ROHM RQ1E050RPTR

ROHM · FETs & Power MOSFETs · MPN RQ1E050RPTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@15V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)31mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF

Technical details

P-Channel 30V 5A 1.5W Surface Mount TSMT-8

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