ROHM RQ1C065UNTR

ROHM · FETs & Power MOSFETs · MPN RQ1C065UNTR

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.5A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation700mW
RDS(on)22mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)870pF

Technical details

20V 6.5A 1V 700mW 22mΩ@4.5V 1 N-channel TSMT8 Single FETs, MOSFETs RoHS

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