ROHM RQ1A070ZPHZGTR

ROHM · FETs & Power MOSFETs · MPN RQ1A070ZPHZGTR

No reviews yet — be the first to review ROHM RQ1A070ZPHZGTR.

Specifications

Output Capacitance(Coss)800pF
Pd - Power Dissipation1.5W
Configuration-
Gate Charge(Qg)58nC
Drain to Source Voltage12V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)750pF
Number1 P-Channel
Input Capacitance(Ciss)7.4nF

Technical details

1.5W 12V 1V 8mΩ@4.5V 1 P-Channel P-Channel TSMT8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs