ROHM RMW200N03TB

ROHM · FETs & Power MOSFETs · MPN RMW200N03TB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
RDS(on)5.6mΩ@4.5V
TypeN-Channel

Technical details

30V 20A 2.5V 3W 5.6mΩ@4.5V N-Channel PSOP-8 Single FETs, MOSFETs RoHS

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