ROHM RJP020N06T100

ROHM · FETs & Power MOSFETs · MPN RJP020N06T100

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Specifications

Gate Charge(Qg)10nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)210mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)160pF

Technical details

N-Channel 60V 2A 500mW Surface Mount SOT-89

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