ROHM RJ1P12BBDTLL

ROHM · FETs & Power MOSFETs · MPN RJ1P12BBDTLL

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.17nF

Technical details

100V 120A 4V 178W 5.8mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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