ROHM RHU002N06T106

ROHM · FETs & Power MOSFETs · MPN RHU002N06T106

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Specifications

Gate Charge(Qg)4.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)200mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)4Ω@4V
Number1 N-channel
Input Capacitance(Ciss)15pF
TypeN-Channel

Technical details

N-Channel 60V 200mA 200mW Surface Mount SOT-323

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