ROHM RF4L070BGTCR

ROHM · FETs & Power MOSFETs · MPN RF4L070BGTCR

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation2W
Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)7.6nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)460pF

Technical details

2W 60V 7A 2.5V 27mΩ@10V 1 N-channel N-Channel DFN2020-8S Single FETs, MOSFETs RoHS

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