ROHM · FETs & Power MOSFETs · MPN RF4G100BGTCR
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| Gate Charge(Qg) | 10.6nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 14.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 530pF |
40V 10A 2.5V 2W 14.2mΩ@10V 1 N-channel DFN2020-8S Single FETs, MOSFETs RoHS