ROHM RF4G060ATTCR

ROHM · FETs & Power MOSFETs · MPN RF4G060ATTCR

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Specifications

Gate Charge(Qg)17.2nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)880pF
TypeP-Channel

Technical details

P-Channel 40V 6A 2W

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