ROHM RF4E110GNTR

ROHM · FETs & Power MOSFETs · MPN RF4E110GNTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.4nC@10V
Output Capacitance(Coss)152pF
Current - Continuous Drain(Id)11A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)8.7mΩ@10V;11.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)504pF

Technical details

N-Channel 30V 11A 2W Surface Mount HUML2020-L8

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