ROHM RF4E110BNTR

ROHM · FETs & Power MOSFETs · MPN RF4E110BNTR

No reviews yet — be the first to review ROHM RF4E110BNTR.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)24nC@10V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
RDS(on)11.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

N-Channel 30V 11A 2W Surface Mount UDFN-8-Power

Related FETs & Power MOSFETs