ROHM · FETs & Power MOSFETs · MPN RF4E100AJTCR
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 13nC@4.5V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 12.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.46nF |
30V 10A 1.5V 2W 12.4mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS