ROHM RF4E100AJTCR

ROHM · FETs & Power MOSFETs · MPN RF4E100AJTCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@4.5V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
RDS(on)12.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.46nF

Technical details

30V 10A 1.5V 2W 12.4mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS

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