ROHM RF4E070BNTR

ROHM · FETs & Power MOSFETs · MPN RF4E070BNTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.9nC@10V
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
RDS(on)28.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)410pF

Technical details

30V 7A 2V 2W 28.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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