ROHM · FETs & Power MOSFETs · MPN RF4C100BCTCR
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| Gate Charge(Qg) | 23.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 320pF |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 15.6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.66nF |
P-Channel 20V 2W Surface Mount DFNWB-6-EP(2x2)