ROHM RF4C100BCTCR

ROHM · FETs & Power MOSFETs · MPN RF4C100BCTCR

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Specifications

Gate Charge(Qg)23.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)15.6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.66nF

Technical details

P-Channel 20V 2W Surface Mount DFNWB-6-EP(2x2)

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