ROHM RF4C050APTR

ROHM · FETs & Power MOSFETs · MPN RF4C050APTR

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Specifications

Output Capacitance(Coss)230pF
Pd - Power Dissipation2W
Configuration-
Drain to Source Voltage20V
Gate Charge(Qg)55nC@4.5V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)26mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.5nF

Technical details

2W 20V 10A 1V 26mΩ@4.5V 1 P-Channel P-Channel UDFN-8-Power Single FETs, MOSFETs RoHS

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