ROHM · FETs & Power MOSFETs · MPN RDD050N20TL
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| Gate Charge(Qg) | 9.3nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| RDS(on) | 720mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 292pF |
200V 5A 4V 20W 720mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS