ROHM · FETs & Power MOSFETs · MPN RD3S100CNTL1
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 190V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 85W |
| RDS(on) | 182mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
190V 10A 2.5V 85W 182mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS