ROHM RD3P175SNTL1

ROHM · FETs & Power MOSFETs · MPN RD3P175SNTL1

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)17.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

100V 17.5A 2.5V 20W 105mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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