ROHM RD3P08BBDTL

ROHM · FETs & Power MOSFETs · MPN RD3P08BBDTL

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation119W
RDS(on)11.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.94nF

Technical details

100V 80A 4V 119W 11.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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