ROHM · FETs & Power MOSFETs · MPN RD3P01BATTL1
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| Gate Charge(Qg) | 19.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 660pF |
100V 10A 4V 25W 1 P-Channel TO-252 Single FETs, MOSFETs RoHS