ROHM RD3H200SNTL1

ROHM · FETs & Power MOSFETs · MPN RD3H200SNTL1

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Specifications

Gate Charge(Qg)12nC@5V
Drain to Source Voltage45V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

45V 20A 2.5V 20W 28mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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