ROHM RD3G03BATTL1

ROHM · FETs & Power MOSFETs · MPN RD3G03BATTL1

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Specifications

Output Capacitance(Coss)215pF
Pd - Power Dissipation56W
Configuration-
Gate Charge(Qg)38nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)19.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.1nF

Technical details

56W 40V 35A 2.5V 19.1mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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