ROHM RCD080N25TL

ROHM · FETs & Power MOSFETs · MPN RCD080N25TL

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation850mW;20W
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.44nF

Technical details

250V 8A 5V 300mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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