ROHM RCD050N20TL

ROHM · FETs & Power MOSFETs · MPN RCD050N20TL

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)9nC@10V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.25V
Pd - Power Dissipation20W
RDS(on)618mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

200V 5A 5.25V 20W 618mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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