ROHM R8009KNXC7G

ROHM · FETs & Power MOSFETs · MPN R8009KNXC7G

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)27nC@400V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation59W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 800V 9A 59W Through Hole TO-220FM

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